My memory

Harold has sent these memories and photos from his days in Warrington. The story and captions are Harold's, with additional notes from me on Orford Tannery, which appear at the end of Harold's memories.

My memory

Memory Stickand xD-Picture Card. For example, the microSD card has an area of just over 1. In single-level cell SLC devices, each cell stores only one bit of information.

The floating gate may be conductive typically polysilicon in most kinds of flash memory or non-conductive as in SONOS flash memory. The cells can be seen as an electrical switch in which current flows between two terminals source and drain and is controlled by a floating gate FG and a control gate CG.

Because the FG is electrically isolated by its insulating layer, electrons placed on it are trapped. When the FG is charged with electrons, this charge screens the electric field from the CG, thus, increasing the threshold voltage VT1 of the cell. This means that now a higher voltage VT2 must be applied to the CG to make the channel conductive.

If the channel conducts at this intermediate voltage, the FG must be uncharged if it was charged, we would not get conduction because the intermediate voltage is less than VT2and hence, a logical "1" is stored in the gate.

If the channel does not conduct at the intermediate voltage, it indicates that the FG is charged, and hence, a logical "0" is stored in the gate. The presence of a logical "0" or "1" is sensed by determining whether there is current flowing through the transistor when the intermediate voltage is asserted on the CG.

In a multi-level cell device, which stores more than one bit per cell, the amount of current flow is sensed rather than simply its presence or absencein order to determine more precisely the level of charge on the FG.

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This, in turn, changes the drain-source current that flows through the transistor for a given gate voltage, which is ultimately used to encode a binary value. The Fowler-Nordheim tunneling effect is reversible, so electrons can be added to or removed from the floating gate, processes traditionally known as writing and erasing.

Over half the energy used by a 1. NOR flash continues to be the technology of choice for embedded applications requiring a discrete non-volatile memory device.

Erasing[ edit ] To erase a NOR flash cell resetting it to the "1" statea large voltage of the opposite polarity is applied between the CG and source terminal, pulling the electrons off the FG through quantum tunneling.

The erase operation can be performed only on a block-wise basis; all the cells in an erase segment must be erased together.

Amdahl Corporation introduces the Amdahl 470

Programming of NOR cells, however, generally can be performed one byte or word at a time. Compared to NOR flash, replacing single transistors with serial-linked groups adds an extra level of addressing.

Bit-level addressing suits bit-serial applications such as hard disk emulationwhich access only one bit at a time. Execute-in-place applications, on the other hand, require every bit in a word to be accessed simultaneously.

Flash memory - Wikipedia

This requires word-level addressing. To read data, first the desired group is selected in the same way that a single transistor is selected from a NOR array.

Next, most of the word lines are pulled up above the VT of a programmed bit, while one of them is pulled up to just over the VT of an erased bit.

The series group will conduct and pull the bit line low if the selected bit has not been programmed. Despite the additional transistors, the reduction in ground wires and bit lines allows a denser layout and greater storage capacity per chip.

The ground wires and bit lines are actually much wider than the lines in the diagrams. Manufacturers try to maximize the amount of usable storage by shrinking the size of the transistors.

My memory

Writing and erasing[ edit ] NAND flash uses tunnel injection for writing and tunnel release for erasing. The architecture of NAND Flash means that data can be read and programmed in pages, typically between 4 KB and 16 KB in size, but can only be erased at the level of entire blocks consisting of multiple pages and MB in size.

My memory

When a block is erased all the cells are logically set to 1. Data can only be programmed in one pass to a page in a block that was erased.

Any cells that have been set to 0 by programming can only be reset to 1 by erasing the entire block. This means that before new data can be programmed into a page that already contains data, the current contents of the page plus the new data must be copied to a new, erased page.

If a suitable page is available, the data can be written to it immediately. If no erased page is available, a block must be erased before copying the data to a page in that block. The old page is then marked as invalid and is available for erasing and reuse.

The vertical layers allow larger areal bit densities without requiring smaller individual cells. Such a film is more robust against point defects and can be made thicker to hold larger numbers of electrons.

Description My Memory is a simple skill that you can ask to remember things and recall them for you later. You can ask it to remember that time when you did something, and later ask how many times you did that thing, or when was the . Memory makes us who we are. If we couldn’t recall the who, what, where, and when of our everyday lives, we would struggle to learn new information, form lasting relationships, or even function. Flash memory is an electronic (solid-state) non-volatile computer storage medium that can be electrically erased and reprogrammed.. Toshiba developed flash memory from EEPROM (electrically erasable programmable read-only memory) in the early s and introduced it to the market in [citation needed] The two main types of flash memory are named after the NAND and NOR logic gates.

V-NAND wraps a planar charge trap cell into a cylindrical form. A string is a series of connected NAND cells in which the source of one cell is connected to the drain of the next one. Strings are organised into pages which are then organised into blocks in which each string is connected to a separate line called a bitline BL All cells with the same position in the string are connected through the control gates by a wordline WL A plane contains a certain number of blocks that are connected through the same BL.Computer Memory.

For the average consumer, computer memory is often confused with storage drives, the hardware that is used to store files and install software. MyMemory is the world largest collaborative translation archive.

Run (Accesskey R) Save (Accesskey S) Download Fresh URL Open Local Reset (Accesskey X). Flash memory is an electronic (solid-state) non-volatile computer storage medium that can be electrically erased and reprogrammed..

Toshiba developed flash memory from EEPROM (electrically erasable programmable read-only memory) in the early s and introduced it to the market in [citation needed] The two main types of flash memory are named after the NAND and NOR logic gates.

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